Abstract :
Copper Indium Telluride Copper Gallium Telluride films were deposited for the first time by the pulse electrodeposition technique at room temperature and at a constant potential of – 0.75 V(SCE)[1,2.3]. The films exhibited single phase. Optical band gap of the films were determined for various duty cycles. Capacitance voltage measurements indicated the films to exhibit p-type behavior. Resistivity was calculated from the resistance values and it was observed that the resistivity increases [4] with increase of indium content. Now in this research paper photovoltaic parameters of CIT and CGT films were studied.
Author Name : C.Vinothini
Keywords: Photovoltaic Parameters, Open Circuit, Short Circuit Current, Fill Factor, Efficiency.
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