Abstract :
Copper indium Telluride Copper Gallium Telluride Copper indium Gallium Telluride films were deposited for the
first time by the pulse electro- deposition technique at room temperature and at a constant potential of – 0.75
V(SCE)[1,2.3]. The films exhibited single phase. Optical band gap of the films were determined for various duty cycles. Capacitance voltage measurements indicated the films to exhibit p-type behavior. Resistivity was calculated from the resistance values and it was observed that the resistivity increases [4] with increase of indium content. Now in this research article raman studies of CIT, CGT and CIGT films were studied.
Author Name : C.Vinothini
Keywords: Thin Films, Solar Cells, Pulse Electrodeposits, 1–III–VI2 Semiconductors, Chalcopyrite, Raman Spectrum, Vibrational Spectroscopy.
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