Photovoltaic Parameters of Copper Indium Telluride and Copper Gallium Telluride Films
Abstract : Copper Indium Telluride Copper Gallium Telluride films were deposited for the first time by the pulse electrodeposition technique at room temperature and at a constant potential of – 0.75 V(SCE)[1,2.3]. The films exhibited single phase. Optical band gap of the films were determined for various duty cycles. Capacitance voltage measurements indicated the films to exhibit p-type […]