Raman Studies of Copper Indium Telluride, Copper Gallium Telluride and Copper Indium Gallium Telluride
Abstract : Copper indium Telluride Copper Gallium Telluride Copper indium Gallium Telluride films were deposited for the first time by the pulse electro- deposition technique at room temperature and at a constant potential of – 0.75 V(SCE)[1,2.3]. The films exhibited single phase. Optical band gap of the films were determined for various duty cycles. Capacitance voltage […]
